The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 μm Partially-Depleted Silicon-on-Insulator Technology

著录项

• 来源
  《中国物理快报：英文版》 |2013年第8期|30-33|共4页
• 作者

  HUANG Hui-Xiang; BI Da-Wei; PENG Chao; ZHANG Yan-Wei; ZHANG Zheng-Xuan;

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• 作者单位

  The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  Graduate University of the Chinese Academic of Sciences, Beijing 100049;

  The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  Graduate University of the Chinese Academic of Sciences, Beijing 100049;

  The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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