Contacting materials and methods for forming ohmic contact to the N-face polarity surfaces of Group-III nitride based semiconductor materials, and devices fabricated using the methods. One embodiment of a light emitting diode (LED) a Group-III nitride active epitaxial region between two Group-III nitride oppositely doped epitaxial layers. The oppositely doped layers have alternating face polarities from the Group III and nitrogen (N) materials, and at least one of the oppositely doped layers has an exposed surface with an N-face polarity. A first contact layer is included on and forms an ohmic contact with the exposed N-face polarity surface. In one embodiment, the first contact layer comprises indium nitride.
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