首页> 外国专利> SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCTION OF SEMICONDUCTOR LAYER, METHOD FOR PRODUCTION OF SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT, LUMINESCENT ELEMENT, DISPLAY PANEL, ELECTRONIC ELEMENT, SOLAR BATTERY ELEMENT, AND ELECTRONIC DEVICE

SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCTION OF SEMICONDUCTOR LAYER, METHOD FOR PRODUCTION OF SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT, LUMINESCENT ELEMENT, DISPLAY PANEL, ELECTRONIC ELEMENT, SOLAR BATTERY ELEMENT, AND ELECTRONIC DEVICE

机译:半导体基板,制造半导体层的方法,制造半导体基板的方法,半导体元件,发光元件,显示面板,电子元件,太阳能电池元件和电子设备

摘要

A semiconductor substrate (1) comprising: a graphite substrate (2) which has heat resistance and flexibility against an external force; and a semiconductor layer (4) which is arranged on the graphite substrate and comprises silicon.
机译:一种半导体衬底(1),包括:石墨衬底(2),该石墨衬底(2)具有耐热性和抵抗外力的挠性;半导体层(4)设置在石墨基板上并包含硅。

著录项

  • 公开/公告号WO2011021248A1

    专利类型

  • 公开/公告日2011-02-24

    原文格式PDF

  • 申请/专利权人 THE UNIVERSITY OF TOKYO;FUJIOKA HIROSHI;

    申请/专利号WO2009JP04002

  • 发明设计人 FUJIOKA HIROSHI;

    申请日2009-08-20

  • 分类号H01L21/02;H01L21/20;

  • 国家 WO

  • 入库时间 2022-08-21 17:59:14

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