首页> 外国专利> Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device

Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device

机译:半导体基板,半导体基板的制造方法,半导体生长用基板,半导体生长用基板的制造方法,半导体元件,发光元件,显示面板,电子元件,太阳能电池元件以及电子设备

摘要

A semiconductor substrate that includes a semiconductor layer that exhibits high crystallinity includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine, and a semiconductor layer that is grown on the surface of the graphite layer, or includes a substrate that includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine on its surface, a buffer layer that is grown on the surface of the graphite layer, and a semiconductor layer that is grown on the surface of the buffer layer.
机译:包括具有高结晶度的半导体层的半导体衬底包括:由通过使芳族四羧酸和芳族四胺缩合而得到的杂环聚合物形成的石墨层;以及在石墨层的表面上生长的半导体层,或者包括该基板包括:石墨层,该石墨层由通过在其表面上缩合芳族四羧酸和芳族四胺而获得的杂环聚合物形成;缓冲层,该缓冲层在该石墨层的表面上生长;以及半导体层,该半导体层在该石墨层的表面上生长。缓冲层的表面。

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