首页> 外国专利> SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR SEMICONDUCTOR GROWTH, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR GROWTH, SEMICONDUCTOR ELEMENT, LIGHT-EMITTING ELEMENT, DISPLAY PANEL, ELECTRONIC ELEMENT, SOLAR CELL ELEMENT, AND ELECTRONIC DEVICE

SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR SEMICONDUCTOR GROWTH, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR GROWTH, SEMICONDUCTOR ELEMENT, LIGHT-EMITTING ELEMENT, DISPLAY PANEL, ELECTRONIC ELEMENT, SOLAR CELL ELEMENT, AND ELECTRONIC DEVICE

机译:半导体基质,制造半导体基质的方法,用于半导体生长的基质,用于生产半导体生长的基质的方法,半导体元件,发光元件,显示面板,电子元件,太阳能电池

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a semiconductor layer having high crystallinity, a method for producing the semiconductor substrate, a substrate for semiconductor growth, a method for producing the substrate for semiconductor growth, a semiconductor element, a light-emitting element, a display panel, an electronic element, a solar cell element and electronic equipment.;SOLUTION: The semiconductor substrate 1 includes a graphite layer 2 which is composed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetraamine, and a semiconductor layer 4 provided on the surface of the graphite layer 2 and using the surface of the graphite layer 2 as a growth surface. Since the graphite layer has excellent crystallinity, the semiconductor layer using the surface of the graphite layer as a growth surface also has excellent crystallinity. Thus, the semiconductor substrate 1 having the semiconductor layer excellent in crystallinity can be obtained.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:为了提供具有高结晶性的半导体层的半导体基板,该半导体基板的制造方法,半导体生长用基板,半导体生长用基板的制造方法,半导体元件,发光装置半导体衬底1包括石墨层2,该石墨层2由通过将芳香族四羧酸和芳香族四胺缩合而得到的杂环聚合物构成,并且半导体层4设置在石墨层2的表面上并且使用石墨层2的表面作为生长表面。由于石墨层具有优异的结晶度,因此将石墨层的表面用作生长表面的半导体层也具有优异的结晶度。因此,可以获得具有结晶性优异的半导体层的半导体基板1。版权所有:(C)2011,日本专利局&INPIT

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