PHASE CHANGE MEMORY DEVICE INCLUDING A NANO-WIRE NETWORK SINGLE ELEMENT-BASED PHASE CHANGE LAYER IN A POROUS OXIDE LAYER AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF SIMULTANEOUSLY FORMING A SINGLE ELEMENT-BASED PHASE CHANGE LAYER AND A NANO-WIRE NETWORK PHASE CHANGE LAYER

摘要

PURPOSE: A phase change memory device and a method for manufacturing the same are provided to ensure fine contact area in a phase change layer by forming nano-wire network using a porous oxide layer.;CONSTITUTION: An interlayer insulating layer(100) is formed on a semiconductor substrate. A lower electrode(110) is formed on the interlayer insulating layer. A porous insulating layer(120) is formed on the lower electrode. A single element-based phase change layer(130) is formed on the porous insulating layer. An upper electrode(140) is formed on the phase change layer. In case of the formation of the single element-based phase change layer, a nano-wire network phase change layer is simultaneously formed in the porous insulating film.;COPYRIGHT KIPO 2011