PHASE CHANGE MATERIAL LAYER AND METHOD OF MANUFACTURING THE SAME AND PHASE CHANGE MEMORY DEVICE COMPRISING PHASE CHANGE MATERIAL LAYER FORMED USING THE SAME AND METHODS OF MANUFACTURING AND OPERATING PHASE CHANGE MEMORY DEVICE

摘要

A phase change material layer, a method for manufacturing the same, a phase change memory device formed by the method, and a method for manufacturing the same, and an operation method thereof are provided to prevent interference between unit cells of PRAM by increasing a crystallization temperature. A method for forming a phase change material layer includes: preparing a co-sputtering target having first and second targets in a reaction chamber for a sputtering type phase change material deposition; loading a substrate on which the phase change material layer will be formed in the reaction chamber; and applying first and second RF powers to the first and second targets, respectively. The first target is a Ge-Sb-Te system target. The second target is any one of an In-Sb-Te system target, an In-Sb system target, and an In target. The first and second RF powers have different intensities. The phase change material layer is an IGST layer, a indium content(a) is 15% = a =20%.