PHASE CHANGE MEMORY DEVICE HAVING NANOWIRE NETWORK SINGLE ELEMENTAL PHASE CHANGE LAYER IN POROUS DIELECTRIC LAYER AND METHOD FOR MANUFACTURING SAME

摘要

A phase change memory semiconductor having a monolayer phase change layer in the form of a nanowire network in a porous insulating film pore.;The phase change memory having a monolithic phase change layer in the form of a nanowire network in the porous insulating film pores includes an active region and an inactive region separated by a device isolation film on a semiconductor substrate, A lower electrode formed on the diode, a porous insulating layer formed on the lower electrode, a single system phase change layer in the form of a nanowire network formed in the porous insulating film hole, an upper electrode formed on the phase change layer, And a plurality of metal wirings formed on the transistors.