OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, CAPABLE OF CONTROLLING THE WRITE TAIL OF A THRESHOLD VOLTAGE DISTRIBUTION AND THE LEFT TAIL OF A RETENTION BAKE

摘要

PURPOSE: An operation method is provided to improve a retention property by applying a pass voltage applied to a non-selected word line after increasing the voltage during a program verification operation.;CONSTITUTION: A plurality of word lines and bit lines cross each other in a memory cell array. A verification voltage is applied to a selected word line(Selected WLn) during a program verification operation. A pass voltage is applied to a non-selected word line(Pass WL). A bit line is pre-charged before a test voltage is applied. A power supply voltage is applied to a drain selected line(DSL).;COPYRIGHT KIPO 2011