Potential well barrier transistor

摘要

PURPOSE: A potential well barrier transistor is provided to increase the gate Schottky turn-on voltage by using a barrier using a potential well barrier. CONSTITUTION: A buffer layer(600) is formed on a substrate. A first barrier(700) is formed on the buffer layer. A channel layer(800) is formed on the first barrier. A second barrier(900) is formed on a channel layer. The second barrier has a potential well. The second barrier is formed with the first-third semiconductor layers. The first and the third semiconductor layer are formed with a bandgap material. The second semiconductor layer is formed with the narrow bandgap material. A cap layer(1000) is formed on the second barrier.