Quantum Current Modelling of Single Electron Transistors with N Potential Barrier

摘要

The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. In this paper, we focus on some basic device characteristics like, single electron tunneling effect on which this single electron transistor works. In this research,transmission coefficient model of a single electron transistor with quantum dot arrays constraints is checked. Then, the current of the transistor is modeled on quantum dots. Finally, current–voltage characteristic based on quantum transport and structural parameters are analyzed.