SOLUTION COMPOSITION, A METHOD FOR MANUFACTURING A METAL OXIDE SEMICONDUCTOR USING THE SAME, A METAL OXIDE SEMICONDUCTOR MANUFACTURED BY THE METHOD, AND A THIN FILM TRANSISTOR INCLUDING THE SAME

摘要

PURPOSE: A solution composition is provided to obtain a metal oxide semiconductor which can be formed in a solution type and shows excellent semiconductor characteristics.;CONSTITUTION: A solution composition for preparing a metal oxide semiconductor for a thin film transistor comprises aluminum salts and organic salts of metal. The negative ion of organic salts of metal includes acetate. A method for manufacturing a metal oxide semiconductor comprises the steps of: preparing the solution composition; coating the solution composition on a substrate; and heating the solution composition applied on the substrate to form the metal oxide semiconductor containing aluminum metal oxide.;COPYRIGHT KIPO 2011