NON-VOLATILE MEMORY DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF HAVING THREE DIMENSIONAL STRUCTURE OF U-SHAPED CHANNEL

摘要

PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to increase the number of memory cells included in one string twice by forming a U-shaped channel including a sub channel for connecting a main channel and an adjacent main channel.;CONSTITUTION: A plurality of memory cells(MC) is laminated according to the u-shaped channel. The selecting transistors(ST1, ST2) are formed on the top of the plurality of memory cells. A plurality of inter-layer insulating films(21) and a conductive film(22) are laminated alternately on a substrate(20). The u-shaped channel is buried within the inter-layer insulating films and the conductive film.;COPYRIGHT KIPO 2011