GRAPHITE CRUCIBLE AND A SILICON SINGLE CRYSTAL MANUFACTURING APPARATUS, CAPABLE PREVENTING SIC FROM BEING FORMED/ACCUMULATED IN THE INSIDE OF A GRAPHITE CRUCIBLE

摘要

PURPOSE: A graphite crucible and a silicon single crystal manufacturing apparatus are provided to prevent the accumulation of pressure on a quartz crucible by discharging generated CO smoothly while suppressing an inactive gas between the graphite crucible and the quartz crucible. ;CONSTITUTION: The side(2) of a graphite crucible(1) comprises the bottom(3) chamfered in radial direction. The graphite crucible is used for the manufacture of a silicon single crystal according to a Czochralski method At least one gas exhaust hole(5) is arranged in the corner(4) of the graphite crucible and has a discharge direction in horizontal approximately.;COPYRIGHT KIPO 2011