SEMICONDUCTOR SUBSTRATE INCLUDING A VERTICAL CELL AND MANUFACTURING METHOD THEREOF CAPABLE OF FORMING A SMALL DEIGN DEVICE BY REMOVING A CELL CONTACT

摘要

PURPOSE: A semiconductor substrate including a vertical cell and a manufacturing method thereof are provided to stably form a first active area and a second active area by dividing the first active area and the second active area after a device isolation layer is formed. ;CONSTITUTION: An active area is defined by forming a device isolation layer(24B) on a substrate(21). A first trench(26A) is formed to divide the active area into a first active area(25A) and a second active area(25B). A buried bit line(28) fills a part of the first trench. A gap fill layer fills the upper side of the buried bit line. A second trench is formed by etching the gap fill layer and the device isolation layer cross the buried bit line.;COPYRIGHT KIPO 2011