FABRICATION METHOD OF METAL SILICIDE SINGLE CRYSTALLINE NANOWIRE AND THE ORIENTED METAL SILICIDE SINGLE CRYSTALLINE NANOWIRE

摘要

PURPOSE: A method for manufacturing metal silicide single crystalline nano-wires and the metal silicide single crystalline nano-wires are provided to adjust the short axial diameters of the nano-wires and secure free-standing properties under a catalyst-free condition and a template-free condition. CONSTITUTION: Iron silicide nano-wires are formed on a substrate by thermally treating a first precursor, a second precursor, and a substrate under an inert gas atmosphere. The first precursor is arranged at the front end part of a reactor and contains iron halide. The second precursor is arranged at the rear end part of the reactor and contains silicon and carbon. The substrate is arranged at the rear end part of the reactor. The relative growth speed of the short axial direction and the long axial direction of the iron silicide nano-wires is controlled according to the weight ratio of the silicon and the carbon. The short axial diameters of the iron silicide nano-wires are controlled without the change of a composition and a crystalline structure according to the weight ratio of the silicon and the carbon.