for electron beam lithography resist

摘要

This invention more specifically relates to a resist for electron beam lithography is a copolymer of two types of organosiloxane compound relates to a negative resist . When using an electron beam resist for lithography of the present invention , there is an effect that the production of better quality of the semiconductor device is easy to manufacture as well as high sensitivity and uniform than that of the resist characteristics, long-term retention of the electron beam .