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Resist for electron beam lithography and a process for producing photomasks using electron beam lithography
Resist for electron beam lithography and a process for producing photomasks using electron beam lithography
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机译:用于电子束光刻的抗蚀剂和使用电子束光刻生产光掩模的方法
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摘要
The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.
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