首页> 外国专利> High voltage output current measuring and limiting device for use in e.g. linear regulator, has negative-channel metal oxide semiconductor current limiting device limits current of negative-channel metal oxide semiconductor

High voltage output current measuring and limiting device for use in e.g. linear regulator, has negative-channel metal oxide semiconductor current limiting device limits current of negative-channel metal oxide semiconductor

机译:高压输出电流测量和限制装置,例如用于线性稳压器,具有负沟道金属氧化物半导体限流装置,可限制负沟道金属氧化物半导体的电流

摘要

The device has metal oxide semiconductor (MOS) transistors (36, 39) that are provided with a thin gate oxide and a wide drain (38). The MOS transistors are classified as drain-wide type transistors e.g. double-diffused MOS (DMOS), drain extended MOS (DEMOS) and laterally diffused MOS (LDMOS). A positive-channel MOS (PMOS) current limiting device limits current of PMOS when an output stage includes a PMOS power transistor. A negative-channel MOS (NMOS) current limiting device limits current of NMOS when the output stage includes a NMOS power transistor.
机译:该装置具有金属氧化物半导体(MOS)晶体管(36、39),其具有薄的栅极氧化物和宽的漏极(38)。 MOS晶体管被分类为例如漏极宽型晶体管。双扩散MOS(DMOS),漏极扩展MOS(DEMOS)和横向扩散MOS(LDMOS)。当输出级包括PMOS功率晶体管时,正沟道MOS(PMOS)电流限制设备会限制PMOS的电流。当输出级包括NMOS功率晶体管时,负沟道MOS(NMOS)电流限制设备会限制NMOS的电流。

著录项

  • 公开/公告号FR2959368A1

    专利类型

  • 公开/公告日2011-10-28

    原文格式PDF

  • 申请/专利权人 CDDIC;

    申请/专利号FR20100001713

  • 发明设计人 AMRANI HAFID;CORDONNIER HUBERT;

    申请日2010-04-22

  • 分类号H03K3/023;H01L25/07;H02H9/02;

  • 国家 FR

  • 入库时间 2022-08-21 17:45:38

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