The Device-Perimeter Dependency in the Transient Current of a Metal-Insulator-Metal-Insulator-Semiconductor Capacitor with Anodic Oxide Films

摘要

The fabrication and electrical characteristics of a capacitor with metal-insulator-metal-insulator-semiconductor structure, Al/Al_2O_3/ Al/AlSi_xO_y/SiO_2/Si(p), is demonstrated. Both the SiO_2 and Al_2O_3 layers were grown by anodic oxidation at room temperature. There are three different pattern sizes of the fabricated devices. The transient currents of the devices after applying voltage pulse stresses were investigated. After applying positive voltage stress, negative transient current could be read, and vice versa. It was found that the positive read currents of the devices are proportional to device perimeters, and the negative read currents are independent of the device areas. The possible contributing factors of the results are fringing field effect and the change of stored charge in the AlSi_xO_y layer.