首页> 外国专利> Class-A type high voltage comparator and amplifier combination for use in e.g. audio circuit, has standard positive-channel metal oxide semiconductor transistors whose gates are connected with each other

Class-A type high voltage comparator and amplifier combination for use in e.g. audio circuit, has standard positive-channel metal oxide semiconductor transistors whose gates are connected with each other

机译:A类高压比较器和放大器组合,用于例如音频电路,具有标准的正极沟道金属氧化物半导体晶体管,其栅极相互连接

摘要

The combination has a positive-channel metal oxide semiconductor (PMOS) type active charge or current mirrors formed of two extended drain PMOS transistors (200, 201) whose gates are connected together and sources are connected to a high voltage supply (VDDHV), and where drains of the PMOS transistors constitute current inputs and outputs. Gates of two standard PMOS transistors are connected with each other. Another extended drain PMOS transistor limits maximum voltage between drain and source terminals of one standard PMOS transistor.
机译:该组合具有由两个扩展的漏极PMOS晶体管(200、201)构成的正沟道金属氧化物半导体(PMOS)型有源电荷或电流镜,两个扩展的PMOS晶体管的栅极连接在一起,源极连接到高压电源(VDDHV),并且PMOS晶体管的漏极构成电流输入和输出。两个标准PMOS晶体管的栅极相互连接。另一个扩展的漏极PMOS晶体管限制了一个标准PMOS晶体管的漏极和源极端子之间的最大电压。

著录项

  • 公开/公告号FR2959626A1

    专利类型

  • 公开/公告日2011-11-04

    原文格式PDF

  • 申请/专利权人 CDDIC;

    申请/专利号FR20100001824

  • 发明设计人 AMRANI HAFID;CORDONNIER HUBERT;

    申请日2010-04-29

  • 分类号H03F1/02;

  • 国家 FR

  • 入库时间 2022-08-21 17:45:41

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