Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan,CREST, JST, Chiyoda, Tokyo 102-0075, Japan;
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan,CREST, JST, Chiyoda, Tokyo 102-0075, Japan;
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan,CREST, JST, Chiyoda, Tokyo 102-0075, Japan;
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan,CREST, JST, Chiyoda, Tokyo 102-0075, Japan;
silicon; MOSFET; discrete dopant; non-equilibrium green's function; r-matrix;
机译:双栅全围绕金属氧化物半导体场效应晶体管(DGAA MOSFET)的阈值电压建模,包括流苏局部效应
机译:尺寸量化和温度对薄膜双栅极金属氧化物半导体场效应晶体管(MOSFET)阈值电压的影响分析
机译:尺寸量化和温度对薄膜双栅极金属氧化物半导体场效应晶体管(MOSFET)阈值电压的影响分析
机译:随机电报信号的离散掺杂效应模拟
机译:金属氧化物半导体场效应晶体管中随机掺杂引起的阈值电压波动分析
机译:P113-M分压/分流器对纳米电喷雾阈值电压和电喷雾稳定性的影响
机译:Gd2O3 / alGaN / GaN金属氧化物半导体异质结构的温度相关阈值电压变化研究