首页> 外国专利> MANUFACTURING METHOD OF LIGHT EMITTING DIODE AND THE LIGHT EMITTING DIODE MANUFACTURED BY USING THE MANUFACTURING METHOD

MANUFACTURING METHOD OF LIGHT EMITTING DIODE AND THE LIGHT EMITTING DIODE MANUFACTURED BY USING THE MANUFACTURING METHOD

机译:发光二极管的制造方法以及使用该制造方法制造的发光二极管

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method which improves the operational capability and the productivity of a process system and also improves crystallinity of a semiconductor layer.;SOLUTION: A manufacturing method of a light emitting diode includes: a stage where a first conductive type nitride semiconductor layer 102 and an undoped nitride semiconductor layer 103 are sequentially grown on a substrate 101 in a first reaction chamber; a stage where the substrate on which the first conductive type nitride semiconductor layer and the undoped nitride semiconductor layer are grown is transferred to a second reaction chamber; a stage where an additional first conductive type nitride semiconductor layer is grown on the undoped nitride semiconductor layer in the second reaction chamber; a stage where an active layer 105 is grown on the additional first conductive type nitride semiconductor layer; and a stage where a second conductive type nitride semiconductor layer 106 is grown on the active layer.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种制造方法,该制造方法可以提高处理系统的操作能力和生产率,并且还可以提高半导体层的结晶度。在第一反应室中的衬底101上顺序地生长N型氮化物半导体层102和未掺杂的氮化物半导体层103。将其上生长有第一导电型氮化物半导体层和未掺杂氮化物半导体层的基板转移到第二反应室中的阶段;在第二反应室内的未掺杂氮化物半导体层上生长另外的第一导电型氮化物半导体层的阶段;在附加的第一导电型氮化物半导体层上生长有源层105的阶段; ;在有源层上生长第二导电型氮化物半导体层106的阶段。版权所有:(C)2012,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号