PROBLEM TO BE SOLVED: To provide a manufacturing method which improves the operational capability and the productivity of a process system and also improves crystallinity of a semiconductor layer.;SOLUTION: A manufacturing method of a light emitting diode includes: a stage where a first conductive type nitride semiconductor layer 102 and an undoped nitride semiconductor layer 103 are sequentially grown on a substrate 101 in a first reaction chamber; a stage where the substrate on which the first conductive type nitride semiconductor layer and the undoped nitride semiconductor layer are grown is transferred to a second reaction chamber; a stage where an additional first conductive type nitride semiconductor layer is grown on the undoped nitride semiconductor layer in the second reaction chamber; a stage where an active layer 105 is grown on the additional first conductive type nitride semiconductor layer; and a stage where a second conductive type nitride semiconductor layer 106 is grown on the active layer.;COPYRIGHT: (C)2012,JPO&INPIT
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