首页> 外国专利> LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING LIGHT EMITTING DIODE, INTEGRATED LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING INTEGRATED LIGHT EMITTING DIODE, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE ILLUMINATION DEVICE, LIGHT EMITTING DIODE DISPLAY, ELECTRONIC APPARATUS, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING LIGHT EMITTING DIODE, INTEGRATED LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING INTEGRATED LIGHT EMITTING DIODE, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE ILLUMINATION DEVICE, LIGHT EMITTING DIODE DISPLAY, ELECTRONIC APPARATUS, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

机译:发光二极管,制造发光二极管的方法,集成发光二极管,制造集成发光二极管的方法,发光二极管背光,发光二极管照明设备,发光二极管,电子装置,电子设备,显示器,显示器电子设备

摘要

A light emitting diode, a method for manufacturing a light emitting diode, an integrated light emitting diode, a method for manufacturing an integrated light emitting diode, a light emitting diode backlight, a light emitting diode illumination device, a light emitting diode display, an electronic apparatus, an electronic device, and a method for manufacturing an electronic device are provided to enhance performance, lifetime, and reliability by obtaining a good environmental resistance. An active layer is formed on an upper surface of a first semiconductor layer(2) of a first conductive type. A second semiconductor layer of a second conductive type is formed on an upper surface of the active layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is provided on the second semiconductor layer and is electrically connected with the second semiconductor layer. The second electrode has a predetermined shape and includes a first metal layer(6) comprising Ag as a main component and a second metal layer(7) comprising palladium and/or platinum for covering the first metal layer.
机译:发光二极管,制造发光二极管的方法,集成发光二极管,制造集成发光二极管的方法,发光二极管背光源,发光二极管照明装置,发光二极管显示器,提供一种电子设备,电子设备以及用于制造电子设备的方法,以通过获得良好的耐环境性来提高性能,寿命和可靠性。在第一导电类型的第一半导体层(2)的上表面上形成有源层。在活性层的上表面上形成第二导电类型的第二半导体层。第一电极电连接到第一半导体层。第二电极设置在第二半导体层上,并且与第二半导体层电连接。第二电极具有预定的形状,并且包括用于覆盖第一金属层的以Ag为主成分的第一金属层(6)和包括钯和/或铂的第二金属层(7)。

著录项

  • 公开/公告号KR20070074484A

    专利类型

  • 公开/公告日2007-07-12

    原文格式PDF

  • 申请/专利权人 SONY CORPORATION;

    申请/专利号KR20070001330

  • 发明设计人 WATANABE YOSHIAKI;HINO TOMONORI;

    申请日2007-01-05

  • 分类号H01L33;

  • 国家 KR

  • 入库时间 2022-08-21 20:33:58

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