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BONDING FILM-ATTACHED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

机译:粘接膜的基材及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a bonding film-attached substrate for reliably substrates even if they are the ones whose main component is not silicon dioxide (SiO2), or that does not have an Si-group skelton, or when one substrate is bonded with the other substrate whose main component is not silicon dioxide (SiO2) or that does not have an Si-group skelton, and to provide a method of manufacturing the same.;SOLUTION: The bonding film-attached substrate includes: an IR absorption glass member 2 whose main component is not silicon dioxide, or that does not have the Si-group skeleton; a silicon oxide film 6 that is formed on a surface of the IR absorption glass member 2 adjacent to the substrate using a vapor-phase deposition method, and that has a thickness of 100-2,000 nm; and a bonding film 7 provided by plasma polymerization on the silicon oxide film 6.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:即使主要成分不是二氧化硅(SiO 2 )或不具有Si基的基板,也可以提供具有粘接膜的基板,以确保基板的可靠性。或当一个基板与另一基板的主要成分不是二氧化硅(SiO 2 )或不具有硅基Skelton的另一基板粘合时,提供一种制造方法解决方案:附有接合膜的基板包括:IR吸收玻璃构件2,其主要成分不是二氧化硅,或者不具有Si基骨架;氧化硅膜6,其通过气相沉积法形成在IR吸收玻璃构件2的与基板相邻的表面上,并且具有100〜2,000nm的厚度。在氧化硅膜6上进行等离子体聚合而形成的接合膜7。版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2011235626A

    专利类型

  • 公开/公告日2011-11-24

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20100259548

  • 申请日2010-11-19

  • 分类号B32B9/00;G02B5/30;C09J183/06;B32B27/00;

  • 国家 JP

  • 入库时间 2022-08-21 17:41:07

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