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SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
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机译:碳化硅衬底,外延层提供的衬底,半导体器件和制造碳化硅衬底的方法
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摘要
The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate, a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate is a silicon carbide substrate having a main surface, and includes: a SiC single-crystal substrate formed in at least a portion of the main surface; and a base member disposed to surround the SiC single-crystal substrate. The base member includes a boundary region and a base region. The boundary region is adjacent to the SiC single-crystal substrate in a direction along the main surface, and has a crystal grain boundary therein. The base region is adjacent to the SiC single-crystal substrate in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate.
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