STRESSED BARRIER PLUG SLOT CONTACT STRUCTURE FOR TRANSISTOR PERFORMANCE ENHANCEMENT
展开▼
机译:应力阻挡塞槽接触结构,可提高晶体管的性能
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier plug is disposed within a portion of the contact opening and the remainder of the contact opening is filled with a lower resistivity contact metal. By selecting the proper materials and deposition parameters, the slot contact can be tuned to induce a tensile or compressive stress on the adjacent channel region, thus being applicable for both p-type and n-type devices.
展开▼