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SEMICONDUCTOR DEVICE WITH A GATE HAVING A BULBOUS AREA AND A FLATTENED AREA UNDERNEATH THE BULBOUS AREA AND METHOD FOR MANUFACTURING THE SAME
SEMICONDUCTOR DEVICE WITH A GATE HAVING A BULBOUS AREA AND A FLATTENED AREA UNDERNEATH THE BULBOUS AREA AND METHOD FOR MANUFACTURING THE SAME
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机译:具有在球形区域下方具有球形区域和平坦区域的门的半导体器件及其制造方法
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摘要
A semiconductor device with a gate having a bulbous area and a flattened area underneath the bulbous area is presented. The semiconductor device includes a semiconductor substrate, an isolation layer, a gate insulation layer, and gates. The semiconductor substrate has recess parts that have first grooves which have bulbous-shaped profiles and second vertically flattened profile grooves which extend downward from the first grooves. The gates are formed in the recess parts in which the gate insulation layer is double layered in the bulbous profile areas and is single layered in the flattened profile areas.展开▼