首页>
外国专利>
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
展开▼
机译:在基极区具有逆向掺杂分布的横向绝缘栅双极晶体管及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
In a semiconductor device of the present invention, a first base region 16 is extended to a part under a gate electrode 7 while having a vertical concentration profile of an impurity that increases from the surface of a semiconductor layer 3 and becomes maximum under an emitter region 5, and the length in the lateral direction from a point where the impurity concentration becomes maximum located under an end of the gate electrode 7 to the boundary with a second base region 15 is not smaller than the length in the vertical direction from the point where the impurity concentration becomes maximum to the boundary with the second base region 15. 展开▼