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Nonvolatile Semiconductor Memory Device Having Multi-Layered Oxide/(OXY) Nitride Film as Inter-Electrode Insulating Film and Manufacturing Method Thereof
Nonvolatile Semiconductor Memory Device Having Multi-Layered Oxide/(OXY) Nitride Film as Inter-Electrode Insulating Film and Manufacturing Method Thereof
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机译:具有多层氧化物/(OXY)氮化物膜作为电极间绝缘膜的非易失性半导体存储器件及其制造方法
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摘要
A nonvolatile semiconductor memory device includes a first insulator, first conductor, element isolation insulator, second insulator and second conductor. The first insulator is formed on the main surface of a substrate and the first conductor is formed on the first insulator. The element isolation insulator is filled into at least part of both side surfaces of the first insulator in a gate width direction thereof and both side surfaces of the first conductor in a gate width direction thereof and is so formed that the upper surface thereof will be set with height between those of the upper and bottom surfaces of the first conductor. The second insulator includes a three-layered insulating film formed of a silicon oxide film, a silicon oxynitride film and a silicon oxide film formed on the first conductor and element isolation insulator. The second conductor is formed on the second insulator.
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