Electron Spin Resonance and Photoluminescence Study of Charge Trap Centers in Silicon Nitride Films and Fabrication of Proposed Oxide-Nitride-Oxide Sidewall 2-bit/Cell Nonvolatile Memories

摘要

We have proposed a novel oxide-nitride-oxide (ONO)-sidewall 2-bit/cell nonvolatile memory and fabricated 70-nm-node nonvolatile memory devices. For low-pressure chemical-vapor-deposition (LPCVD)-SiN films, with increasing SiH_4/NH_3 mixture gas ratio, we