An highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide charge storage stacks

摘要

A highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide stacks is proposed and demonstrated by numerical device simulation. The operational mechanisms including read, program, erase and inhibit in an array structure are studied in detail. This double storage capability per single cell and highly scalable structure is very suitable for high density NVM application.