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Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus
Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus
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机译:氮化硅膜的形成方法,非易失性半导体存储装置的制造方法,非易失性半导体存储装置以及等离子体装置
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摘要
A Plasma processing apparatus (100) introduces microwaves into a chamber (1) by a plane antenna (31) which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber (1) by using the plasma processing apparatus, and plasma is generated by the microwaves. Then, a silicon nitride film is deposited by the plasma on a surface of an object to be processed. The trap density of the silicon nitride film is controlled by adjusting the conditions of the plasma CVD process.
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