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Branched nanoscale wires

机译:分支纳米线

摘要

The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires. In some cases, the branched nanoscale wires may be produced using vapor-phase and/or solution-phase synthesis. Branched nanoscale wires may be grown by depositing nanoparticles onto a nanoscale wire, and segments or “branches” can then be grown from the nanoparticles. The nanoscale wire may be any nanoscale wire, for example, a semiconductor nanoscale wire, a nanoscale wire having a core and a shell. The segments may be of the same, or of different materials, than the nanoscale wire, for example, semiconductor/metal, semiconductor/semiconductor. The junction between the segment and the nanoscale wire, in some cases, is epitaxial. In one embodiment, the nanoparticles are adsorbed onto the nanoscale wire by immobilizing a positively-charged entity, such as polylysine, to the nanoscale wire, and exposing it to the nanoparticles. In another embodiment, nanoparticles are deposited onto a nanoscale wire by etching the nanoscale wire to produce an H-terminated surface, then exposing the surface to a solution comprising a metal ion, which can be reduced by the surface to form nanoparticles. Segments or branches can then be grown from the deposited nanoparticles to form the branched nanoscale wire.
机译:本发明总体上涉及纳米技术,尤其涉及分支的纳米级线。在一些情况下,可以使用气相和/或溶液相合成来生产分支的纳米级线。可以通过将纳米颗粒沉积到纳米级线上来生长分支的纳米级线,然后可以从纳米颗粒中生长段或“分支”。纳米级线可以是任何纳米级线,例如,半导体纳米级线,具有核和壳的纳米级线。所述片段可以是与纳米级线相同或不同的材料,例如,半导体/金属,半导体/半导体。在某些情况下,段和纳米级线之间的连接是外延的。在一个实施方案中,通过将诸如聚赖氨酸的带正电荷的实体固定到纳米级线上,并将其暴露于纳米粒子,将纳米颗粒吸附到纳米级线上。在另一个实施方案中,通过蚀刻纳米级线以产生H端表面,然后将该表面暴露于包含金属离子的溶液中而将纳米颗粒沉积到纳米级线上,该金属离子可以被该表面还原以形成纳米颗粒。然后可以从沉积的纳米颗粒中生长段或分支,以形成分支的纳米级线。

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