METHOD FOR MANUFACTURING CONTACT HOLES IN CMOS DEVICE BY GATE-LAST PROCESS

摘要

A method for manufacturing contact holes in Complementary Metal-Oxide-Semiconductor (CMOS) device by gate-last process includes that: forming a first type Metal-Oxide-Semiconductor (MOS) high K dielectric/metal gate (HKMG); forming and metalizing lower contact holes of source/drain electrodes of the first type MOS and a second type MOS, and at the same time forming the HKMG of the second type MOS, wherein filling the same material in the lower contact holes of source/drain electrodes as the metal gate of the second type MOS; forming and metalizing the contact holes of the metal gates of the first type and the second MOS and upper contact holes of source/drain electrodes of the first type MOS and the second type MOS, wherein the upper contact holes of source/drain electrodes are aligned with the lower contact holes of source/drain electrodes. The difficulty of the contact holes etching and the metal depositing is reduced, the process step is simplified, and the reliability of the device is increased by the method.