METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE CAPABLE OF IMPROVING A PROPERTY OF A BURIED GATE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to secure the same channel or source/drain distance between cells by forming a junction with the diffusion of dopant included in a PSG layer.;CONSTITUTION: A device isolation area defining an active area is formed on a semiconductor substrate. A recess(180) is formed by etching the semiconductor substrate. A gate electrode pattern(190) is formed in he recess. A PSG(Phosphosilicate Glass) layer(200). An impurity included in the PSG layer is diffused to the active area by thermally processing the PSG layer.;COPYRIGHT KIPO 2012