SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF IMPROVING THE GATE RESISTANCE REDUCTION AND GIDL PROPERTY OF A BURIED GATE

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the refresh property of a semiconductor device by improving the GIDL(Gate Induced Drain Leakage) property by the void occurring during the deposition of a nitride layer for protecting the gate electrode.;CONSTITUTION: A recess(140) is formed on a semiconductor substrate(100). A first gate electrode(160) is buried within the recess. A side wall spacer is formed on the first gate electrode. A second gate electrode(180) is formed on the first gate electrode including the side wall spacer. A gate protection film(190) is buried within the recess.;COPYRIGHT KIPO 2011