MANUFACTURING DEVICE AND METHOD OF A SILICON CARBIDE SINGLE CRYSTAL WHICH CAN BE GROWN UP WITHOUT DAMAGE OF QUALITY

摘要

PURPOSE: A manufacturing device and method of a silicon carbide single crystal are provided to manufacture silicon carbide of high quality by preventing the coalescing of poly-crystal.;CONSTITUTION: A base(9) comprises a first side and a second side. The second side is an opposite side of the first side. A seed crystal is installed at the first side. A purge gas introducing tool(11) supports the base. The purge gas introducing tool supplies purge gas to the base from the second side. The base comprises purge gas introduction routes. The purge gas introduction routes discharges the purge gas provided to the external edge portion of the seed crystal from the base. The surface of the base is coated by fireproof metallic carbide.;COPYRIGHT KIPO 2012