RESIN CAPABLE OF BEING USED FOR EUV LITHOGRAPHY AND EB LITHOGRAPHY, AND A PHOTORESIST COMPOSITION COMPRISING THE SAME

摘要

PURPOSE: A resin, and a photoresist composition is provided to provide a photoresist pattern with uniform CD uniformity.;CONSTITUTION: A resin comprises a unit structure in chemical formula aa, In chemical formula aa, R^1 is a C1-C6 alkyl group randomly comprising one or more halogen atoms, hydrogen, or halogen, T^1 is a C4-C34 sultone ring group randomly having one or more substituents, Z^1 is a C1-6 alkanediyl group randomly comprising one or more substituents, or a group in chemical formula a-1: -A^10-(-X^10-A^11-)s-X^11-A^12-, Z^2 is a single bond, or -CO-. In chemical formula a-1, X^10 and X^11 is respectively -O-, -NH-, -CO-, -CO-O-, -O-CO-, -CO-NH- or -NH-CO-, A^10, A^11, and A^12 is respectively and independently a C1-C5 divalent aliphatic hydrocarbon group randomly having one or more substituents, and s is 0 or 1.;COPYRIGHT KIPO 2012