PHOTOSENSITIVE COPOLYMER AND A PHOTORESIST COMPOSITION CAPABLE OF USING FOR HIGH ENERGY LITHOGRAPHY LIKE EXTREME ULTRAVIOLET LITHOGRAPHY, AND A PHOTORESIST COMPOSITION

摘要

PURPOSE: A photosensitive copolymer is provided to improve resolution, line width roughness and decay heat, and to provide desirable etching-resistance, excellent polymer, and consistence between photoresist rots, light velocity and resolution improvement.;CONSTITUTION: A photosensitive copolymer is in chemical formula 1. In chemical formula 1, R1-R5 is respectively H, C1-6 alkyl or C4-6 aryl, R6 is fluorinated or non-fluorinated C5-30 acid-labile group, each Ar is monocyclic, polycyclic or fused polycyclic C6-20 aryl group, R7 and R8 is respectively -OR11 or -C(CF3)2OR11 group. Each R9 is independently F, C1-10 alkyl, C1-10 fluoroalkyl, C1-10 alkoxy or C1-10 fluoroalkoxy group, and R10 is cation-combined C10-40 photoacid generator-containing group. Mole fraction a, b and d is independently 0-0.80, mole fraction c is 0.01-0.80 and e is 0-0.50.;COPYRIGHT KIPO 2012