首页> 外国专利> PHOTORESIST COMPOSITION, A COATED SUBSTRATE INCLUDING A LAYER BASED ON THE COMPOSITION, AND A METHOD FOR FORMING A PHOTO-LITHOGRAPHY PATTERN USING THE SAME CAPABLE OF EFFICIENTLY FORMING A PHOTO-LITHOGRAPHY PATTERN BASED ON A NEGATIVE TONE DEVELOPING PROCESS

PHOTORESIST COMPOSITION, A COATED SUBSTRATE INCLUDING A LAYER BASED ON THE COMPOSITION, AND A METHOD FOR FORMING A PHOTO-LITHOGRAPHY PATTERN USING THE SAME CAPABLE OF EFFICIENTLY FORMING A PHOTO-LITHOGRAPHY PATTERN BASED ON A NEGATIVE TONE DEVELOPING PROCESS

机译:光致抗蚀剂组合物,包括基于该组合物的层的涂覆基质以及使用能够有效地形成基于负色调方法的照相光刻技术的图像形成照相光刻图案的方法

摘要

PURPOSE: A photoresist composition, a coated substrate including a layer based on the composition, and a method for forming a photo-lithography pattern using the same are provided to improve pattern collapse margin and to reduce the loss of thicknesses in the process of treating photo-lithography.;CONSTITUTION: A photoresist composition includes a first unit, copolymer, and a photoacid generator. The first unit is formed based on monomer containing a polymeric functional group and a first part represented by chemical formula I or chemical formula II. The copolymer contains one or more additional unit without an acid cutting group which is capable of forming a carboxylic acid group by cutting. In chemical formula I or chemical formula II, the R1 and the R2 are respectively C1 to C10 linear, branched, cyclic organic groups or are arbitrarily capable of forming a ring; one of the a and the b is 1; another of the a and the b is 1 or 2; the R3 and the R4 are respectively C1 to C10 linear, branched, and cyclic organic groups or are arbitrarily capable of forming a ring; one of the c and the d is 1; and another of the c and the d is 1 or 2.;COPYRIGHT KIPO 2012
机译:用途:提供光致抗蚀剂组合物,包括基于该组合物的层的涂覆的基底以及使用该组合物形成光刻图案的方法,以提高图案塌陷裕度并减少在处理光的过程中厚度的损失。光刻法:光致抗蚀剂组合物包括第一单元,共聚物和光致产酸剂。第一单元基于包含聚合物官能团的单体和由化学式I或化学式II表示的第一部分形成。该共聚物包含一个或多个没有酸切割基团的附加单元,该酸切割基团能够通过切割形成羧酸基团。在化学式I或化学式II中,R 1和R 2分别为C 1至C 10的直链,支链,环状有机基团或任意能够形成环; a和b中的一个为1; a和b中的另一个为1或2; R3和R4分别为C1至C10的直链,支链和环状有机基团,或任意能形成环的基团。 c和d之一为1; c和d中的另一个为1或2; COPYRIGHT KIPO 2012

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