METHOD FOR MANUFACTURING NANO-RODS IN A WAFER LEVEL AT A HIGH YIELD

摘要

PURPOSE: A method for manufacturing nano-rods is provided to allow high integration and mass production of an application device by controlling the diameter and separation distance of nano-rods using droplet patterns as a mask in a dry etching process.;CONSTITUTION: A method for manufacturing nano-rods comprises next steps; a step where a nano material layer is deposited on an upper portion of a substrate layer(10), a step where a metal layer is deposited on the upper portion of the nano material layer, a step where drop patterns(40) are formed by performing thermal processing and plasma processing on the metal layer, a step where nano-rods(50) are formed on the lower portion of the drop patterns by dry-etching the metal layer using the drop patterns as a mask, and a step where the drop patterns remaining on the top of the nanorods is eliminated. The nano material layer is made of either one of ZnO, GaN, GaAs, SiC, SnO2, GaP, InP, Si, or a metal doped DLC used as a semiconductor film. The nano-rods are formed into various shapes by adjusting an angle of a target(70) in the dry etching step.;COPYRIGHT KIPO 2012