首页> 外国专利> LOW DIELECTRIC THIN FILM AND A METHOD FOR MANUFACTURING THE SAME TO IMPROVE THE DIELECTRIC CONSTANT AND MECHANICAL PROPERTIES THROUGH A SIMPLE PROCESS

LOW DIELECTRIC THIN FILM AND A METHOD FOR MANUFACTURING THE SAME TO IMPROVE THE DIELECTRIC CONSTANT AND MECHANICAL PROPERTIES THROUGH A SIMPLE PROCESS

机译:低介电薄膜及其制造方法,其通过简单的过程来改善介电常数和机械性能

摘要

PURPOSE: A low dielectric thin film and a method for manufacturing the same are provided to obtain a low dielectric constant and thermal stability at the same time by using a linear or nonlinear organic/inorganic precursor.;CONSTITUTION: A method for manufacturing a low dielectric thin film comprises a step of chemical deposition of a silane compound, in which allyl group of 1:0.1-1:10 is contained under oxidizing gas, and a pore-forming material using plasma and a step of heat treatment. The silane compound containing allyl group is selected from the group consisting of allyltrimethylsilane, allyltriethylsilane, allyltrimethoxysilane, allyltriethoxysilane, allyltripropylsilane, allyltripropoxysilane, and their mixture. The pre-forming material is selected from the group consisting of a benzene compound including allyl group, a nonlinear hydrocarbon compound including epoxy group, cyclohexane, toluene, norbornene, terpinene, xylene, linear alkene, nonlinear unsaturated hydrocarbon, and their mixture.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Reactive material; (BB) Oxidizing gas
机译:目的:提供一种低介电薄膜及其制造方法,以通过使用线性或非线性有机/无机前驱体同时获得低介电常数和热稳定性。组成:一种低介电薄膜的制造方法薄膜包括化学沉积硅烷化合物的步骤和热处理步骤,其中在氧化气体下包含1:0.1-1:10的烯丙基的硅烷化合物和使用等离子体的成孔材料。含有烯丙基的硅烷化合物选自烯丙基三甲基硅烷,烯丙基三乙基硅烷,烯丙基三甲氧基硅烷,烯丙基三乙氧基硅烷,烯丙基三丙基硅烷,烯丙基三丙氧基硅烷及其混合物。预成型材料选自包括烯丙基的苯化合物,包括环氧基,环己烷,甲苯,降冰片烯,萜品烯,二甲苯,直链烯烃,非线性不饱和烃及其混合物的非线性烃化合物。 KIPO 2013; [参考数字](AA)反应性材料; (BB)氧化气体

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