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FLOATING-BODY DRAM TRANSISTOR COMPRISING SOURCE/DRAIN REGIONS SEPARATED FROM THE GATED BODY REGION
FLOATING-BODY DRAM TRANSISTOR COMPRISING SOURCE/DRAIN REGIONS SEPARATED FROM THE GATED BODY REGION
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机译:浮动体DRAM晶体管,包括与栅极区分开的源/漏区
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摘要
A semiconductor device along with circuits including the same and methods of operating the same are described. The device includes an electrically floating body region, and a gate is disposed over a first portion of the body region. The device includes a source region adjoining a second portion of the body region, the second portion adjacent the first portion and separating the source region from the first portion. The device includes a drain region adjoining a third portion of the body region, the third portion adjacent the first portion and separating the drain region from the first portion.
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