FLOATING-BODY DRAM TRANSISTOR COMPRISING SOURCE/DRAIN REGIONS SEPARATED FROM THE GATED BODY REGION

摘要

and semiconductor devices and circuits containing it, it is a method of operation is described. The device is electrically floating body region 18 contains , the gate 16 is disposed over the first portion 18-1 of the body region . The apparatus includes a source region 20 adjacent to the second part (18-2) of the body region , and the second portion neighboring the first portion , to isolate the source region from the first part . The device comprises a third part ( 18-3 ) and the adjacent drain region (22 ) of the body region , wherein the third portion is located adjacent the first portion , and isolated from the first portion of the drain region . ;