GALLIUM NITRIDE-BASED LED CAPABLE OF ENHANCING A COMPETITIVE PRICE, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A gallium nitride-based LED and a manufacturing method thereof are provided to improve hole mobility by controlling the doping concentration of an intermediate layer.;CONSTITUTION: An n-type nitride semiconductor layer(230) is formed on a substrate. An active layer(240) is formed on the n-type nitride semiconductor layer. A p-type doped intermediate layer(250) is formed on the active layer. A p-type nitride semiconductor layer(260) is formed on the p-type doped intermediate layer. The doping concentration of the p-type doped intermediate layer is lower than the doping concentration of the p-type nitride semiconductor layer. The thickness of the p-type doped intermediate layer is 10 to 100nm.;COPYRIGHT KIPO 2013