GALLIUM NITRIDE SUBSTRATE SEPARATION METHOD OF A GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE DEVICE WHICH INCLUDES A RECYCLABLE GALLIUM NITRIDE SUBSTRATE, CAPABLE OF REDUCING MANUFACTURING COSTS AND THE DENSITY OF A DEFECT

摘要

PURPOSE: A gallium nitride substrate separation method of a gallium nitride-based light emitting diode device is provided to improve external quantum efficiency by forming a light emitting diode unit to a thickness of a minimum value.;CONSTITUTION: A metal nano particle is formed on a gallium nitride wafer(S10). A hydrogen ion and the metal nano particle are combined by plasma-processing the metal nano particle(S20). A gallium nitride-based LED unit is grown up on the metal nano particle(S30). The hydrogen ion is separated from the metal nano particle by irradiating a near ultraviolet ray to the metal nano particle(S40). A gallium nitride substrate and the LED unit are separated by heat-processing the metal nano particle(S50).;COPYRIGHT KIPO 2011