Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AIN/sapphire substrate

摘要

GaN-based light-emitting diodes (LEDs) grown on sapphire with ex situ A1N nucleation layer prepared by radio-frequency sputtering were investigated. GaN-based epitaxial layers grown on the Ar-implanted AIN/sapphire (AIAS) substrates exhibited selective growth and subsequent lateral growth due to the difference of lattice constants between the implanted and implantation-free regions. Consequently, air voids over the implanted regions were formed around the GaN/AIN/ sapphire interfaces. We proposed the growth mechanisms of the GaN layer on the AIAS substrates and characterized the LEDs with embedded air voids. With a 20 mA current injection, experimental results indicate that the light output power of LEDs grown on the AIAS substrates was enhanced by 25% compared with those of conventional LEDs. This enhancement can be attributed to the light scattering at the GaN/air void interfaces to increase the light extraction efficiency of the LEDs.