Low Temperature Furnace Method to Deposit Transparent Indium Oxide Film on Gallium Nitride-Based LED

摘要

Increasing the light extraction and the current spreading area of GaN LEDs is helpful for enhancing the efficiency of the light emission. We have developed a simple deposited method of Indium oxide (In{sub}xO{sub}y) on the top layer of GaN LEDs by using furnaces at the low temperature (550℃). The deposited Film of Indium oxide on GaN LEDs is crystallites. The electroluminescent intensity of GaN LEDs with Indium oxide is higher than GaN LEDs without Indium oxide about six times.