METHOD FOR INCREASING ETCH SELECTIVITY OF A CARBON FILM WITH A LOWER EXTINCTION COEFFICIENT AND STRESS CAPABLE OF SUPPLYING HIGH TENSILE STRESS

摘要

PURPOSE: A method for increasing etch selectivity of a carbon film with a lower extinction coefficient and stress is provided to maintain high etch selectivity by securing lower etch rates during the doping of an AHM(ashable hard mask) films.;CONSTITUTION: An evaporation method of a film is as follows. A substrate is arranged in a plasma enhanced CVD(Chemical Vapor Deposition) chamber. A carbon based first AHM layer(10) is coated on the substrate. The substrate is copped with a dopant which is the one of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, or carbon dioxide. The atomic percentage of one or more dopant is higher than 5% of the first AHM alyer.;COPYRIGHT KIPO 2013;[Reference numerals] (10) Coated AHM; (20) Substrate